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发明名称
Verfahren zum Herstellen von Halbleitervorrichtungen
摘要
申请公布号
DE69409347(T2)
申请公布日期
1998.07.23
申请号
DE1994609347T
申请日期
1994.12.27
申请人
MATSUSHITA ELECTRONICS CORP., TAKATSUKI, OSAKA, JP
发明人
MATSUMOTO, SHOJI, KYOTO-SHI, KYOTO 612, JP;NIKOU, HIDEO, OTSU-SHI, SHIGA 520-02, JP;NAKAGAWA, SATOSHI, MUKOU-SHI, KYOTO 617, JP
分类号
H01L21/02;H01L21/3213;(IPC1-7):H01L21/00;H01G4/06;H01L27/115
主分类号
H01L21/02
代理机构
代理人
主权项
地址
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ЭНЕРГЕТИЧЕСКАЯ УСТАНОВКА
