发明名称 Control device for double gate semiconductor device
摘要 <p>A control device (20) includes a first gate control circuit (21) for supplying a control signal from a control signal inputted to an input terminal P1 to a gate G1, and a second gate control circuit (22) for supplying a control signal from a control signal inputted to the same input terminal P1 to a gate G2. The first gate control circuit (21) is provided with a delay circuit (31), and after a turn-off signal is supplied to the gate G2 for the transition from a thyristor condition to a transistor condition, a turn-off signal is supplied to the gate G1, thereby positively stopping operation of the double gate semiconductor device.</p>
申请公布号 EP0854575(A2) 申请公布日期 1998.07.22
申请号 EP19980200589 申请日期 1993.04.28
申请人 FUJI ELECTRIC CO., LTD. 发明人 TERASAWA, NORIHO;MIYASAKA, TADASHI;NISHIURA, AKIRA;NISHIURA, MASAHARU;SAKURAI, KENYA;MASAHITO, OTSUKI
分类号 H03K17/0812;H03K17/082;H03K17/567;(IPC1-7):H03K17/567 主分类号 H03K17/0812
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