发明名称 |
Control device for double gate semiconductor device |
摘要 |
<p>A control device (20) includes a first gate control circuit (21) for supplying a control signal from a control signal inputted to an input terminal P1 to a gate G1, and a second gate control circuit (22) for supplying a control signal from a control signal inputted to the same input terminal P1 to a gate G2. The first gate control circuit (21) is provided with a delay circuit (31), and after a turn-off signal is supplied to the gate G2 for the transition from a thyristor condition to a transistor condition, a turn-off signal is supplied to the gate G1, thereby positively stopping operation of the double gate semiconductor device.</p> |
申请公布号 |
EP0854575(A2) |
申请公布日期 |
1998.07.22 |
申请号 |
EP19980200589 |
申请日期 |
1993.04.28 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
TERASAWA, NORIHO;MIYASAKA, TADASHI;NISHIURA, AKIRA;NISHIURA, MASAHARU;SAKURAI, KENYA;MASAHITO, OTSUKI |
分类号 |
H03K17/0812;H03K17/082;H03K17/567;(IPC1-7):H03K17/567 |
主分类号 |
H03K17/0812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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