| 摘要 |
<p>The present invention relates to a bias stabilizing circuit for a field effect transistor formed of a compound semiconductor comprising: a bias circuit in which one output electrode of a bipolar transistor (Q100, Q120, Q130, Q140) which is applied at its base with a bias voltage is connected through a first resistor (R103, R123, R132, R143) to a power supply (+B) and the other output electrode thereof is grounded through a second resistor (R104, R124, R133, R144); and a field effect transistor (102, 122, 132, 142) formed of a compound semiconductor biased by said bias circuit, wherein one output electrode (100D, 120D, 130D, 140D) of said bipolar transistor (Q100, Q120, Q130, Q140) is connected to one output electrode of said field effect transistor (102, 122, 132, 142) and the other output electrode (100G, 120G, 130G, 140G) of said bipolar transistor (Q100, Q120, Q130, Q140) is connected to a gate of said field effect transistor (102, 122, 132, 142).</p> |
