发明名称 |
Trench insulated gate bipolar transistor |
摘要 |
An Insulated Gate Bipolar Transistor has a gate in the form of a trench positioned in a p region in a silicon body. The device operates in a thyristor mode having a virtual emitter which is formed during operation by the generation of an inversion layer at the bottom of the trench within the p region. The device is inherently safe and turns off rapidly as removal of a gate signal collapses the emitter. As the trench gate is situated within the p region, it can withstand high voltages when turned off as the reverse electric field is prevented from reaching the trench gate <IMAGE> |
申请公布号 |
EP0854518(A1) |
申请公布日期 |
1998.07.22 |
申请号 |
EP19970310639 |
申请日期 |
1997.12.29 |
申请人 |
MITEL SEMICONDUCTOR LIMITED |
发明人 |
AMARATUNGA, GEHAN ANIL JOSEPH;UDREA, FLORIN |
分类号 |
H01L29/74;H01L29/739;H01L29/749;H01L29/78 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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