发明名称 |
Coating solutions for use in forming bismuth-based ferro-electric thin films, and ferro-electric thin films, ferro-electric capacitors and ferro-electric memories formed with said coating solutions, as well as processes for production thereof |
摘要 |
A coating solution (I) used in forming Bi-based ferroelectric thin films (II) containing Bi, metallic element A (Bi, Pb, Ba, Sr, Ca, Na, K and/or rare earth elements) and metallic B (Ti, Nb, Ta, W, Mo, Fe, Co and/or Cr), is claimed. (II) contains metal alkoxides of Bi and metallic elements A and B respectively, and an organometallic compound obtained by hydrolysing a composite metal alkoxide, formed by two or more metal alkoxides with water or optionally with a catalyst, and contains 1-1.1 times the stoichiometric amount of Bi. Also claimed are: (i) (II) formed by the application of (I) onto an electrode on a substrate followed by annealing the applied coating; (ii) a ferroelectric capacitor and memory containing (II) and (iii) a process for producing (II) by applying (I) onto an electrode formed over a substrate and annealing the applied coating (I). |
申请公布号 |
EP0854504(A1) |
申请公布日期 |
1998.07.22 |
申请号 |
EP19980100704 |
申请日期 |
1998.01.16 |
申请人 |
TOKYO OHKA KOGYO CO., LTD.;OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
SAWADA, YOSHIHIRO;HASHIMOTO, AKIRA;KOIWA, ICHIRO;MITA, JURO;OKADA, YUKIHISA;KANEHARA, TAKAO;KATO, HIROYO |
分类号 |
C01B13/14;C01G29/00;C01G33/00;C01G35/00;C23C16/40;C23C16/448;H01B3/12;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
C01B13/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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