发明名称 Thermally isolated integrated circuit
摘要 Thermally isolated circuit formed on a semiconductor on insulator structure includes a semiconductor surrounded by a semiconductor outer portion with an insulator therebetween. A cavity formed in the underlying semiconductor substrate opposite to the island provides thermal isolation.
申请公布号 US5783854(A) 申请公布日期 1998.07.21
申请号 US19960729208 申请日期 1996.10.15
申请人 HONEYWELL INC. 发明人 DRIES, MICHAEL F.;ROISEN, ROGER L.
分类号 H01L27/02;(IPC1-7):H01L31/058 主分类号 H01L27/02
代理机构 代理人
主权项
地址