| 发明名称 |
Semiconductor device having an insulating layer having a concave section formed by oxidizing a semiconductor layer |
| 摘要 |
In a semiconductor device in which a passive element and an active element are formed on a substrate in which a thin film semiconductor layer is formed on an insulating layer or an insulating substrate, the device has a concave portion in at least a part of a portion below a wiring connecting the passive element or the active element.
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| 申请公布号 |
US5783842(A) |
申请公布日期 |
1998.07.21 |
| 申请号 |
US19970803499 |
申请日期 |
1997.02.20 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KOHCHI, TETSUNOBU;MIYAWAKI, MAMORU |
| 分类号 |
G02F1/1343;G02F1/136;G02F1/1362;G02F1/1368;H01L21/3205;H01L21/336;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/1343 |
| 代理机构 |
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代理人 |
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