| 摘要 |
PROBLEM TO BE SOLVED: To obtain a low cost semiconductor inertia sensor suitable for mass production without requiring laser processing, and to obtain a high sensitivity and high precision semiconductor inertia sensor with a low parasitic capacitance and a high inter-electrode gap formation precision. SOLUTION: A semiconductor inertia sensor 30 comprises a movable electrode 26 provided above a single crystal silicon layer 20, and a pair of fixed electrodes 27, 28 provided to sandwich this movable electrode 26 between them. The single crystal silicon layer 20 is formed on a glass substrate 10 and the movable electrode 26 comprises a single crystal silicon layer 22a and is provided above the single crystal silicon layer 20 so that it can float, and the pair of the fixed electrodes 27, 28 comprises single crystal silicon layers 22b, 22c and are joined to the single crystal silicon layer 20 via films 21b, 21c which can be etched without corroding the silicon. |
