| 摘要 |
PROBLEM TO BE SOLVED: To provide the high selectivity for protective films such as photoresist and polysilicon, etc., also making feasible of the rapid etching by a method wherein the etching step is performed without controlling the attainable temperature of an etched base substance using a dry etching gas containing perfluorocycloolefin. SOLUTION: The dry etching gas containing perfluorocycloolefin may be a producing source of fluorine radical from a plasma in the dry etching step. Especially, the etching step is performed without substantially controlling the attainable temperature of the etched base substance, that is, at the temperature not exceeding±30% of the attainable temperature of the etched base substance under no control at all. Through these procedures, the title dry etching method is provided with the high polysilicon selectively and the high photoresist selectivity also making it possible to perform rapid etching step.
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