| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode for a ferroelectric body, in which film fatigue caused by the repetitively alternate polarization of a ferroelectric body can be reduced, and residual polarization the ferroelectric body can be prevented from being reduced and to provide a non-volatile memory device which can be improved in data write characteristic and attaining lower power consumption. SOLUTION: A ferroelectric electorde (a lower electorde 8 or an upper electorde 10) which is laminated on a ferroelectric body 9 for the formation of a laminated structure has substantially the same crystal structure as the ferroelectric body 9 and is formed of an electrically conductive oxide. Specifically, the ferroelectric electrode is formed of ReO3 , which is of crystal structure where a hole is located at an A-site, and metal ion, enter in the hole of ReO3 from the ferroelectric body. |
