| 摘要 |
PROBLEM TO BE SOLVED: To provide an alignment method, for a device, in which the accuracy of an alignment operation between laminated patterns is enhanced and which can deal with a fine laminated pattern, to provide a measuring method for the accuracy of an alignment operation and to provide a mark for alignment measurement. SOLUTION: An element isolation pattern and a word-line pattern are formed on a semiconductor substrate. A source-drain region and a first interlayer insulating film are formed, and a bit-line contact pattern and a bit-line pattern are formed by using position information on the word-line pattern. A second interlayer insulating film is formed, and a storage-node-contact-patterned-line pattern is formed by using the position information on the word-line pattern regarding the X-direction at right angles to the word-line pattern and by using position information on the bit-line pattern regarding the Y-direction at right angles to the bit-line pattern. Pieces of position information on a plurality of lower-layer patterns are used individually only regarding a direction in which an interference is generated due to a dislocation. |
