NON-VOLATILE SEMICONDUCTOR MEMORY, AND CONSTANT VOLTAGE GENERATION CIRCUIT THEREFOR

摘要

PROBLEM TO BE SOLVED: To prevent the generation of a so-called 'soft write phenomenon' in a non-volatile semiconductor memory by causing no transient overcharging of a bit line immediately after the activation thereof. SOLUTION: The non-volatile semiconductor memory includes a current mirror circuit CM, which comprises a PMOS transistor P1 connected between a power source node and a first node with a drain gate connected thereto and a PMOS transistor P2 connected between the power source node and a second node, an NMOS transistor N1 connected between the first node and the ground with a gate connected to the second node and an NMOS transistor N2 and an active element N3 connected in series between the second node and the ground with a drain gate connected thereto, and further a control circuit 30 is provided to set the first and second nodes to a ground level with a control signal inactivated while controlling the current mirror circuit to an inactive state. When the control signal is activated, the levels of the first and second nodes are reset to activate the current mirror circuit.