| 摘要 |
PROBLEM TO BE SOLVED: To improve resonance tunneling effects, reduce electric consumption due to high peak current increase and low operation voltage at a room temperature and increase operation speed by providing an asymmetrical combination that gradually reduces the width of a quantum well layer by gradually increasing the width of a quantum barrier layer and then gradually reducing it. SOLUTION: A structure is provided by subsequently stacking a conductive collector 7, a third quantum barrier layer 6, a second quantum well layer 5, a second quantum barrier layer 4, a first quantum well layer 3, a first quantum barrier layer 2 and a conductive emitter 1 on the upper part of a substrate 8. The structure is an asymmetrical combination wherein the width of the quantum barrier layer gradually increases and then gradually reduces and the width of the quantum well layer gradually reduces. With electrostatic capacity reduction by a thin outer barrier layer and an arrangement with Stark shift at a quantum bound level having low energy, resonance tunneling effects are increased and a low peak voltage and increased peak current are induced. |
