发明名称 |
METHOD AND DEVICE FOR FORMING RESIST PATTERN |
摘要 |
PROBLEM TO BE SOLVED: To make it possible to continuously process a substrate to be processed by dividing a first energy beam and a second energy beam into an electron beam having a high size controlling or micro machining region and an excimer laser having a low region respectively and by drawing them on a same resist. SOLUTION: Resist which contains two components of polyvinyl phenol and 4,4'-diazide-chalcone is applied by rotation on a silicon substrate 101 and a resist layer 102 is formed by heat treatment. An excimer laser as irradiation with a first energy beam 103 is exposed in a low requested region for micronized or size controlling property via a photo mask and a first resist reaction part 104 is formed. Additionally a drawing is made in a high requested region for a micronized or size controlling property by an electron beam as a second energy beam 106 and a second resist reaction part 107 is formed. |
申请公布号 |
JPH10189415(A) |
申请公布日期 |
1998.07.21 |
申请号 |
JP19960347141 |
申请日期 |
1996.12.26 |
申请人 |
HITACHI LTD |
发明人 |
YAMAMOTO JIRO;UCHINO MASAICHI;YOSHIMURA TOSHIYUKI;TERASAWA TSUNEO |
分类号 |
G03F7/008;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/008 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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