发明名称 CORRECTING METHOD FOR EXPOSURE PATTERN, CORRECTING DEVICE FOR EXPOSURE PATTERN, MASK FOR EXPOSURE, EXPOSURE METHOD AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To easily correct for independent patterns or projecting patterns by calculating a shifting or logical sums, logical multiplications and exclusive logical multiplications of figures for designed patterns and by extracting the independent patterns and the projecting patterns from first patterns. SOLUTION: Patterns B are generated by patterns A as designed patterns being made a plus shift of d1 (S101). After that patterns D are generated by patterns C which are generated by calculating logical sums of the patterns B and the patterns A being made a minus shift of d2 (S102, 103). Patterns E are successively generated by the patterns D being made minus sift of d3 (S104), patterns F are generated by calculating logic multiplications of the patterns E and the patterns A, patterns G which are terminal parts of the independent patterns and the projecting patterns are generated by calculating exclusive logic sums of the patterns F and the patterns A (S106) and corrective processing is performed (S107).
申请公布号 JPH10189409(A) 申请公布日期 1998.07.21
申请号 JP19960341279 申请日期 1996.12.20
申请人 SONY CORP 发明人 TOMITA MANABU
分类号 G03F1/36;G03F1/68;H01L21/027 主分类号 G03F1/36
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