Thin film transistor and method for fabricating the same

摘要

A thin film transistor includes an insulating substrate; a polysilicon pattern formed on the insulating substrate; a first nitride layer disposed on a channel portion of the polysilicon pattern; heavily doped semiconductor layer regions disposed in upper portions of the polysilicon pattern on sides of the first nitride layer pattern; an interlevel insulating layer disposed on the insulating substrate, the polysilicon pattern, the first nitride layer and the heavily doped semiconductor layer regions, the interlevel insulating layer having a contact hole to expose a portion of the heavily doped semiconductor layer; source and drain electrodes connected to the heavily doped semiconductor layer regions through the contact hole; and a gate electrode formed on the interlevel insulating layer disposed on the first nitride layer.