| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing a reloadable phase transition type optical memory medium capable of producing the reloadable phase transition type optical memory medium which is short in the erasing time of recorded information and is stable in a recording state. SOLUTION: A thin film consisting of a material which is an In-Sb-Te-base martial or an In-Sb-Te-Se-base martial formed by substituting part of the Te of this In-Sb-Te-base martial with Se and has the compsn. expressed by the general formula (In)a (Sb)b (M)c (where, an indicating the ratio of In is 4 to 28atm.%; b indicating the ratio of Sb is 17 to 44atm.%, M is Te, or Te+Se; c indicating the ratio of M is 46 to 63atm.% and the atom ratio of Se to the content of Te and Se is <=0.35atm.% when M=Te+Se) is formed on a substrate. Next, this thin film is irradiated with laser pulses, by which the thin film is melted. The molten thin film is rapidly cooled to be made amorphous. A process to crystallize the thin film made amorphous by further irradiating the thin film with the laser pulses successively increased in the pulse width is added, by which the thin film is formed into a memory medium. |
