发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To keep uniformity in time for access to a memory address to be accessed, to let an on-chip DRAM contribute to accelerate the speed of access to an off-chip DRAM, and further to use a mass memory as a built-in memory. SOLUTION: The hierarchical structure of memory is formed from a CPU (CPU core), primary cache (CAA1 and CDA1) and memory device (on-chip DRAM1). Then, this memory device (DRAM1) enables operation in the state of using two of 1st mode for mapping at a fixed address stored as the main memory of CPU (without extending any external memory) and 2nd mode for operating as the secondary cache of CPU (when extending the external memory).</p>
申请公布号 JPH10187536(A) 申请公布日期 1998.07.21
申请号 JP19960343344 申请日期 1996.12.24
申请人 HITACHI LTD 发明人 MIZUNO HIROYUKI;WATABE TAKAO;HIRAKI MITSURU
分类号 G11C11/401;G06F12/08;G06F15/78;(IPC1-7):G06F12/08 主分类号 G11C11/401
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