发明名称 Method of measuring thickness of a multi-layers film
摘要 A multi-layers with (m+1) sublayers is formed on a substrate. The purpose of the present invention is to measure the thickness of the sublayer (m+1) using the ellipsometry even the physical parameters of the other sublayers are unknow. The key of the method is to reguard the multi-layers (sublayer 1/sublayer 2/ . . . /sublayer m) as a reduced layer. Then the multi-layers becomes a double layers formed on a substrate, that is a sublayer (m+1) and a reduced layer. Assume that the sublayer (m+1) is composed of material M. Then the multi-layers becomes a double M layers formed on a substrate, that is a M layer and a reduced layer. A first measurement is performed to measure the thickness (T1) of the double layers by using an ellipsometry. Next, a second measurement is done to measure the thickness (T2) of the reduced layer by using an ellipsometry. The thickness of the sublayer (m+1) can be obtained by performing (T1-T2).
申请公布号 US5784167(A) 申请公布日期 1998.07.21
申请号 US19960753916 申请日期 1996.12.03
申请人 UNITED MICROELECTRONICS CORP. 发明人 HO, CHAO-HUANG
分类号 G01B11/06;(IPC1-7):G01N21/41;G01N21/21 主分类号 G01B11/06
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