MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a wiring electrode having satisfactory contact performance. SOLUTION: In the case of covering a contact hole formed at an insulating film, first aluminum or a wiring material 214 containing aluminum as a main component is formed as a film, and a film 215 containing element belonging to groups 12 to 15 as a main component is formed. It is heat-treated at 400 deg.C in an atmosphere containing hydrogen for 0.5 to 2hrs to give fluidity to the material, thereby realizing an effective contact.