| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a WNF film with satisfactory coverage and burying properties of a fine hole and a method for manufacturing it. SOLUTION: The semiconductor device comprises a first conductive part 46 for constituting a source and drain diffused layer of a MOS transistor formed on a main surface side of a semiconductor substrate 41, an insulating film 47 formed on a main surface side of the substrate 41 and formed with a hole 47a arriving at the part 46, second conductive parts 48, 49 formed in the hole 47a and connected at its lower part to the prat 46, and third conductive part 50 connected to upper parts of the parts 48, 49 to constitute wirings. In this case, at least parts of the parts 48, 49 are formed by using a tungsten nitride film containing 1% or more of fluorine by atomic density. |
