LAYERED REFFORELECTRIC THIN-FILM, ITS FORMATION, CAPACITOR FOR SEMICONDUCTOR MEMORY CELL AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To improve crystallinity by a small that load by thermally treating a thin film, having amorphous phase at a fixed temperature and forming the ferroelectric thin film having a layered structure through fluorite-like crystal structure. SOLUTION: A gate electrode 13 and source-drain regions 15 are formed to a semiconductor substrate 10, and an interlayer insulating layer 20, a buffer layer 21 and a lower electrode layer 22 are further formed. A thin film having amorphous phase is formed onto the lower electrode 22 by a spin-coating method by the organometallic-liquid raw material of one pack. The thin film having amorphous phase is thermally treated at a fixed temperature by a rapid temperature-elevation heating method, and the ferroelectric thin film 23 having layered structure is formed through fluorite-like crystal structure. An upper electrode layer 24 consisting of Pt is formed on the ferroelectric thin-film 23 by a sputtering method, and the capacitor composed of the lower electrode 22, the ferroelectric thin-film 23 and the upper electrode layer 24 is constituted by patterning, etc.