| 摘要 |
PROBLEM TO BE SOLVED: To decrease heat treating temperature, such as post annealing tempera ture by forming a metal oxide film on the first electrode, and after the film formation performing heat treatment in an oxygen-pressure atmosphere higher than one atmospheric pressure. SOLUTION: A field oxide film 2 is formed on a silicon substrate 1. After a gate oxide film 5 and a polysilicon word line 6 are patterned, drain/source regions 3 and 4 are formed, respectively. Then, an insulating layer 7, to which a polysilicon layer 8 is deposited in contact with a source region 4, is deposited on the entire surface, and the surface is flattened. Then, a lower electrode 38, which is the first electrode, and a barrier metal layer 39 are etched to the same pattern on the flattened insulating layer 7. Thereafter, an upper electrode 37 and a high dielectric film 40 are formed, and a capacitor CAP is manufactured. For the capacitor CAP, heat treatment for high-pressure oxygen post annealing is performed in the atmosphere containing pressure oxygen higher than one atmospheric pressure. |
