发明名称 DIELECTRIC CAPACITOR AND DIELECTRIC MEMORY AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To decrease leakage current to a large extent by sequentially laminating a dielectric film and the second electrode on a first electrode, and performing electro lytic polishing of the surface of the first electrode on the side of that dielectric film. SOLUTION: On a barrier metal layer 39 comprising a Ti-bonding-agent layer and a TiN layer, a lower electrode 38, which is the first electrode and comprising Pt, is formed in the saw-blade cross-sectional shape with convex parts 38a and concave parts 38b. The lower electrode 38 in the saw-blade cross-sectional shape undergoes electrolytic polishing, and the convex part 38a' is flattened into the spherical curved surface, wherein the curvature radius is expanded. Accompanied by this flattening, the concave part 38b' between the convex parts is made shallow. Furthermore, a high dielectric film 40 is laminated on the lower electrode 38. An upper electrode 37, which is a second electrode and comprises Pt, is formed on the film 40 by vacuum evaporation method. Thus, a high dielectric capacitor is formed. In this way, electrolytic concentration at the time of operation at the interface between the lower electrode 38 and the high dielectric film 40 can be prevented, and the leakage current can be decreased to a large extent.
申请公布号 JPH10189909(A) 申请公布日期 1998.07.21
申请号 JP19960358134 申请日期 1996.12.27
申请人 TEXAS INSTR JAPAN LTD 发明人 AOKI KATSUHIRO;FUKUDA YUKIO;NUMATA KEN;OKUNO YASUTOSHI;NISHIMURA AKITOSHI
分类号 H01G4/33;H01L21/02;H01L21/321;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108 主分类号 H01G4/33
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