| 摘要 |
PROBLEM TO BE SOLVED: To realize capacitor structure, in which a conductor layer is used as a capacitor electrode and an insulating layer is employed as a dielectric by laminating the conductor layer connected to a wiring and at ground potential respectively through the insulating layer, having a specified film thickness and dielectric constant and forming a filter element having specified electrostatic capacity. SOLUTION: In a filter element 10, a grounding line 17, formed onto a substrate 19 for giving a ground potential to power-supply potential to a circuit element formed onto the substrate 19, is used as a conductor layer connected to a wiring, and a power-supply line 11 shaped onto the substrate 19 for giving power-supply potential to the circuit element formed onto the substrate 19 is employed as a conductor layer joined with a wiring. silicon nitride SiO (relative dielectric constantε=4.0) is used as an insulating layer, and film thickness is set within a range of 10-1nm. Filter-element capacity is set at an electrostatic capacity value of approximately several dozend pFs to several nFs. Capacitor structure, in which the conductor layers connected to the wiring and ground potential are employed as capacitor electrodes, and the insulating layer used as a dielectric, can be realized.
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