| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a metal silicide gate electrode by which a high melting point metal silicide layer is formed without requiring an additional process. SOLUTION: A polycrystalline layer is formed, a high melting point metal layer is sputtered on it, and the high melting point metal layer is covered with a nitride or oxide cap layer 18 to form a gate electrode mesa 20. Then, an oxide layer 26 is deposited on the mesa 20 by LPCVD. The oxide layer is deposited at a temperature, where the high melting point metal layer reacts with the polycrystalline layer 14' under the metal layer and forms a high melting point metal silicide layer 28. Then, sidewall spacer layers 30 and 32 are formed by using the oxide layer 26. |
