| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure which is hard to be damaged, even by heat treatment in a hydrogen-gas atmosphere by forming a capacitor thin film on a lower electrode, forming an upper electrode on the capacitor thin film, and constituting the upper electrode from the specified elements. SOLUTION: An interlayer insulating film 20 is formed on the entire surface of a semiconductor substrate 10, wherein a source/drain region 15 is provided at the neighbor of an element-separating region 11 having a LOCOS structure. On the interlayer insulating film 20, a buffer layer 21 comprising Ti is formed as a film by a sputtering method. Then, the film of a lower electrode layer 22A comprising Pt is formed on the buffer layer 21. On the lower electrode layer 22A, a capacitor thin film comprising a ferroelectric thin film 23A is formed on the entire surface. Furthermore, after the film of an Ru layer has been formed on the capacitor thin film, heat treatment is performed for the Ru layer, and an upper electrode layer 24A comprising Ru1-x Ox (where 0.1<x<0.64) is formed. |
