| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-frequency circuit device, in which the reflection loss of a high-frequency signal is reduced, even when an interconnection route is constituted by using a via-hole interconnection and which prevents the degradation of a high-frequency characteristic by a method, wherein a conductor which connects a wiring pattern to an outer lead is formed only in a part on the inner wall of a via hole. SOLUTION: A plurality of wiring patterns 2, which are composed of a laminated metal such as, e.g. gold/nickel/copper or the like are formed on the surface of a package substrate 1. A recessed part 3 is formed nearly in the central position of the package substrate 1, and a high-frequency integrated circuit chip 4 composed of, e.g. GaAs is bonded to the recessed part 3. A via hole 11 is formed in the desired position of the package substrate 1, and a conductor 12 composed of a metal which is similar to, e.g. the wiring patterns 2 is formed in only a part on an inner wall of the via hole 11. The via hole 11 is formed, e.g. to have a depth of about 1.0mm and a diameter of about 0.1mm, and the conductor 12 in a thickness of about 0.025mm is formed on the inner wall over a width of about 0.1mm. |
