| 摘要 |
PROBLEM TO BE SOLVED: To enhance external quantum efficiency by a method wherein, in a lower part of an interface between an islandish semiconductor layer indicating one conductive type and an islandish semiconductor layer indicating reverse conductive type, a plurality of semiconductor layers having grater refractive index than semiconductor layers indicating one conductive type and a plurality of semiconductor layers having smaller refractive index are laminated. SOLUTION: If a current flows from a separate electrode 8 to a common electrode 9, holes are recoupled from an n-AlGaAs layer 3 into a first p-AlGaAs layer 4 to luminescence. However, in a lower part of an interface between the n-AlGaAs layer 3 and the p-AlGaAs layer 4, when a plurality of semiconductor layers having a smaller refractive index than the n-AlGaAs layer 3 and a plurality of semiconductor layers having a larger refractive index than this semiconductor layer are laminated to provide an alternate layer 10, even if lights emitted from an interface portion between the n-AlGaAs layer 3 are the p-AlGaAs layer 4 are irradiated to a semiconductor substrate 1 side, the lights are reflected by the interface portion of this alternate layer 10 and irradiated to the separate electrode 8 side. Accordingly, external quantum efficiency of a luminous diode is enhanced. |
