METHOD AND SYSTEM FOR DEPOSITING FAR-ULTRAVIOLET PHOTORESIST

摘要

PROBLEM TO BE SOLVED: To realize a stabilized deposition with high photosensitivity by introducing a precursor gas containing methyl silane into a deposition chamber and subjecting the precursor gas to plasma polymerization by applying RF power to electrodes in the chamber. SOLUTION: Pressure in a chamber 15 is stabilized at a level between 1Torr and 2Torr. After a substrate is heated up to 50 deg.C-200 deg.C, a precursor gas of methyl silane is introduced at a flow rate of 20-150sccm into the chamber and a plasma is generated thus depositing a film. Power being applied to plasma electrodes is in the range of 50-200W. Area of the power electrode is preferably set at about 103 cm" so that the power per unit area thereof will be in the range of 0.05-0.20Wcm<2> .