| 摘要 |
PROBLEM TO BE SOLVED: To decrease defects based on the nitrogen of GaN by setting In, As or P in a specified range for an electron transit layer of a high electron-mobility transistor, comprising a GaN-system compound semiconductor layer. SOLUTION: A GaN buffer layer 12 is formed on a semi-insulating silicon substrate 11 by using dimethylhydrazine and Ga. An In-doped GaN layer 13 is laminated on the GaN buffer layer 12 by using ammonia, Ga and In. The adding amount of In in the In-doped GaN layer 13 is changed in the range from 1×10<19> cm<-3> or more to 5×10<20> cm<-3> or less, and the electron mobility of the In-doped GaN layer 13, which becomes an electron transit layer, is set at 5,500 or more. On this In-doped GaN layer 13, and an n-AlGaN layer 14 is formed. Then, SiO2 is deposited on the layer 14. Thereafter, with a gate part as a mask, etching is performed, and a source electrode 15, a drain electrode 17 are formed. Furthermore, the mask is removed, and a gate electrode 16 is formed.
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