| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device which is capable of quantitative and continuous in-situ measurement of a semiconductor wafer potential remaining stress by measuring its warpage during pre-heating. SOLUTION: Plural small windows 8 and 14 are provided on side walls of a process chamber along a peripheral direction, a laser generating part LD1 which approaches a surface of a semiconductor wafer WF placed on a wafer placing base 6 and emits probe light hν1 in parallel is provided on the small window 8 and a light reception part PD1 which receives the probe light hν1 is provided on the small window 14. Here the probe light hν1 is screened by a semiconductor wafer warp generated during pre-heating and detected outputs S1, S2 and S3 which represent warping parts and warpage are output from the light reception part PD1. The warping part and the warpage relatively relate to a potential remaining stress amount and its distribution which is accumulated in the semiconductor wafer WF, therefore the potential remaining stress can be quantatively and continuously measured in-situ.
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