| 摘要 |
The present invention provides a method of forming a high strength dielectric film which provides a high dielectric constant for a high density device, and a method of fabricating a capacitor using such a method. The method includes a two step process where one of the steps provides a composition BST layer serving as a nucleation layer. For example, a BST layer having a composition of BaxSr1-xTiO3, where X has a range of about 0 to 0.4. Another BST layer having a composition of BaxSr1-xTiO3 is provided, where X is about 0.5. Such a method provides a high dielectric film with a very smooth surface, compared to conventional methods.
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