SUBSTRATO EPITASSIALE DI CONCENTRAZIONE GRADUATA PER DISPOSITIVO A SEMICONDUTTORI AVENTE UNA DIFFUSIONE DI COMPLETAMENTO DELLA

摘要

The epitaxial substrate of a semiconductor chip device has a resurf diffusion in at least one of its isolated wells in the device chip surface. The wells are separated by junction diffusions. The thickness of the epitaxial layer is reduced by placing an increased percentage of its total charge for given a breakdown voltage (punch-through voltage) in the lower portion of the layer.