SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device which can solve such a problem that the increase of the capacitance of a capacitor used for a DRAM becomes difficult due to silicon oxide produced when polycrystalline silicon is used for electrodes even when tantalum oxide is used as the dielectric substance of the capacitor. In the semiconductor device provided with a capacitor structure formed in a cylindrical body, the cylindrical capacitor structure provided with a cylindrical lower electrode composed of a tantalum nitride, a dielectric substance which is formed on the lower electrode and composed of polycrystalline tantalum oxide, and an upper electrode which is formed on the dielectric substance and composed of tantalum nitride is constituted in one constituent element.