| 摘要 |
<p>PURPOSE:To decrease the number of production stages for thin-film transistors having double gate structures. CONSTITUTION:A lower gate electrode 102, a gate insulating film 103, an island semiconductor layer 104, an ohmic contact layer 105, a source electrode 106, a drain electrode 107, and an insulating film 108 thereon are successively formed on a glass substrate 101. An upper gate electrode 111 and a picture element electrode 109 are in succession formed simultaneously of a transparent conductive material ITO.</p> |
