| 摘要 |
PURPOSE:To obtain the high photosensitivity and the low residual voltage of the title body by forming a-SiC layer and an org. photoconductor layer on a conductive substrate in this order and forming a region having specified composition and thickness in the a-SiC layer. CONSTITUTION:The photoconductive layer 2 composed of a-SiC and the org. semiconductor layer 3 in this order are formed on the conductive substrate 1. A 1st layer region 2a rich in a carbon element and a 2nd layer region 2b contg. a relatively less carbon element are provided in the inside of the photoconductive layer 2 allowing it to contact with the interface between both layers 2 and 3. The thickness of the region 2a is a range of 10-2,000Angstrom , and the atomic ratio of the composition shown by the formula Si1-xCx, in the region 2a is determined as follows, X is 0<x<0.5, preferably 0.01<x<0.4. |
