发明名称 |
CURRENT-SENSING MOSFETS IN PARALLELED MOSFET POWER CIRCUIT |
摘要 |
Six sets of parallel-connected MOSFETs (e.g., 42-46) are gated to provide a 3-phase (26, 28, 30) output. At least one of the MOSFETs (48, 64, 66) in each of three sets of the six sets has a separately metallized current-sensing pad. The output from this pad represents the phase current. When phase current reaches a maximum permissible level, this signal controls the MOSFET gates to limit current.
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申请公布号 |
WO9831092(A1) |
申请公布日期 |
1998.07.16 |
申请号 |
WO1997US22884 |
申请日期 |
1997.12.12 |
申请人 |
TURBODYNE SYSTEMS, INC. |
发明人 |
HALIMI, EDWARD, M.;WILLETT, DAVID, T. |
分类号 |
G01R19/00;H02M7/5387;H02P6/08;H03K17/082;(IPC1-7):H02M3/24 |
主分类号 |
G01R19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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