发明名称 CURRENT-SENSING MOSFETS IN PARALLELED MOSFET POWER CIRCUIT
摘要 Six sets of parallel-connected MOSFETs (e.g., 42-46) are gated to provide a 3-phase (26, 28, 30) output. At least one of the MOSFETs (48, 64, 66) in each of three sets of the six sets has a separately metallized current-sensing pad. The output from this pad represents the phase current. When phase current reaches a maximum permissible level, this signal controls the MOSFET gates to limit current.
申请公布号 WO9831092(A1) 申请公布日期 1998.07.16
申请号 WO1997US22884 申请日期 1997.12.12
申请人 TURBODYNE SYSTEMS, INC. 发明人 HALIMI, EDWARD, M.;WILLETT, DAVID, T.
分类号 G01R19/00;H02M7/5387;H02P6/08;H03K17/082;(IPC1-7):H02M3/24 主分类号 G01R19/00
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