发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 The upper electrode of a capacitor is constituted of laminated films which respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
申请公布号 WO9831053(A1) 申请公布日期 1998.07.16
申请号 WO1998JP00027 申请日期 1998.01.08
申请人 HITACHI, LTD.;MIKI, HIROSHI;NAKAI, HIROMI;KUSHIDA, KEIKO;SHIMAMOTO, YASUHIRO;TAKATANI, SHINICHIRO;FUJISAKI, YOSHIHISA 发明人 MIKI, HIROSHI;NAKAI, HIROMI;KUSHIDA, KEIKO;SHIMAMOTO, YASUHIRO;TAKATANI, SHINICHIRO;FUJISAKI, YOSHIHISA
分类号 H01L21/02;(IPC1-7):H01L27/108;H01L21/824;H01L27/10;H01L27/04 主分类号 H01L21/02
代理机构 代理人
主权项
地址