Gallium arsenide metal-semiconductor FET with gate electrode

摘要

The MESFET has a semiconductor region (3) with intermediate concentration of first conductivity, lying between low doped channel and drain regions of first conductivity. A highly doped semiconductor region (8) lies between one end of the gate electrode (7) and the drain region. The highly doped semiconductor region layer is separated from the gate electrode and the channel region is wider than the gate electrode length. The gate electrode and the semiconductor region with intermediate concentration are not in mutual contact.