发明名称 Druckkontaktierte Halbleitervorrichtung und Verfahren zur Herstellung einer druckkontaktierten Halbleitervorrichtung
摘要 A semiconductor substrate (2) is pressed against heat compensators (6, 31) for electrical contact therewith without brazing. Silicone rubber (32) fixes the outer peripheral edge of the semiconductor substrate (2) and its adjacent portion on the heat compensator (31), preventing position shifts of the semiconductor substrate (2) without thermal distortion and, accordingly, preventing damages to the semiconductor substrate (2). The absence of thermal distortion, spikes, voids due to brazing permits the prevention of electrical characteristic deterioration.
申请公布号 DE4321053(C2) 申请公布日期 1998.07.16
申请号 DE19934321053 申请日期 1993.06.24
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 SAKAMOTO, TOKUMITSU, FUKUOKA, JP;KONISHI, YUZURU, FUKUOKA, JP
分类号 H01L21/52;H01L23/051;H01L23/31;H01L29/74;(IPC1-7):H01L23/48;H01L23/34;H01L29/744 主分类号 H01L21/52
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