发明名称 |
Method and apparatus for detecting defects in wafers |
摘要 |
<p>A method for detecting electrical defects in a semiconductor wafer. includes the steps of: a) applying charge to the wafer such that electrically isolated structures are raised to a voltage relative to electrically grounded structures; b) obtaining voltage contrast data for at least a portion of the wafer containing such structures using an electron beam; and c) analyzing the voltage contrast data to detect structures at a voltages different to predetermined voltages for such structures. Voltage contrast data can take one of a number of forms. In a simple form. data for a number of positions on a line scan of an electron beam can be taken and displayed or stored as a series of voltage levels and scan positions. Alternatively. the data from a series of scans can he displayed as a voltage contrast image. Analysis can be achieved by comparison of one set of voltage contrast data. for example voltage contrast data from one die on a wafer. with one or more other such sets. for example voltage contrast data for corresponding structures on one or more preceding dice. so as to determine differences therebetween.</p> |
申请公布号 |
EP0853243(A2) |
申请公布日期 |
1998.07.15 |
申请号 |
EP19980400054 |
申请日期 |
1998.01.13 |
申请人 |
SCHLUMBERGER TECHNOLOGIES, INC. |
发明人 |
TALBOT, CHRISTOPHER GRAHAM;ORJUELA, LUIS CAMILO;LO, CHIWOEI WAYNE;WANG, LI |
分类号 |
G01N23/225;G01N21/88;G01N21/956;G01N27/60;G01R1/06;G01R31/302;G01R31/307;H01J37/28;H01L21/66;(IPC1-7):G01R31/305 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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