发明名称 |
TFT structure including a photo-imageable insulating layer for use with LCDs and image sensors |
摘要 |
This invention is related to an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines. Both the manufacturability and capacitive cross-talk of the TFT-based device are improved due to the use of a photo-imageable insulating layer between the pixel electrodes and the address lines.
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申请公布号 |
US5780871(A) |
申请公布日期 |
1998.07.14 |
申请号 |
US19970832345 |
申请日期 |
1997.04.02 |
申请人 |
OIS OPTICAL IMAGING SYSTEMS, INC. |
发明人 |
DEN BOER, WILLEM;ZHONG, JOHN Z. Z.;GU, TIEER |
分类号 |
G02F1/1343;G02F1/1333;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/146;H01L29/04;H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L31/037;H01L31/20 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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