发明名称 |
Polymer removal from top surfaces and sidewalls of a semiconductor wafer |
摘要 |
A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed simultaneously by a chemical mechanism comprising reactive species derived from a microwave-excited fluorine-containing downstream gas, and a physical mechanism comprising ion bombardment that results from a radio frequency excited plasma and accompanying wafer self bias. A vacuum pump draws stripped photoresist and residues from the surface of the wafer and exhausts them from the chamber.
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申请公布号 |
US5780359(A) |
申请公布日期 |
1998.07.14 |
申请号 |
US19950570058 |
申请日期 |
1995.12.11 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BROWN, WILLIAM;HERCHEN, HARALD;MERRY, WALTER;WELCH, MICHAEL |
分类号 |
H01L21/302;H01L21/02;H01L21/027;H01L21/3065;H01L21/311;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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