| 摘要 |
PROBLEM TO BE SOLVED: To enable to control the orientation of a functional molecule in the same layer to fix in a desired size or a shape by forming a netlike barrier structure on a substrate and fixing the functional molecule in a region surrounded by the structure. SOLUTION: After a 8nm thick carbide layer is formed on the whole surface of the substrate by carbonizing a Si cleavage plane of the silicon substrate with C2 H2 and H2 , a silicon carbide (β-SiC) is grown by using an alternate supply process of 1500 times every 5sec about each gaseous starting material C2 H2 and SiH2 Cl2 . Next, the orthogonal rectangular netlike barrier structure 1 composed of theβ-SiC is formed on the substrate 3 by executing bias treatment in 2 directions on the substrate. The silicon substrate 3 is cooled to room temp. and a fullerene molecule 2 as the functional molecule is vapor deposited by vacuum deposition method and after that treated under heating. The functional molecule moves on the netlike barrier structure composed of theβ-SiC with surface diffusion effect by the heat treatment and is filled successively from the inside wall of the netlike barrier structure.
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