发明名称 MANUFACTURE OF MAGNESIUM OXIDE FILM AND ITS MANUFACTURING DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a NaCl type crystal structure of MgO thin film with a wide forming condition regardless of the coefficient of linear expansion of a backing substrate, the substrate temperature and the heat treatment temperature at the time of forming the film and to easily manufacture a high quality of MgO thin film by using magnesium or magnesium oxide as a target and decomposing the vapor of compound containing magnesium and a reactive gas while sputtering on the substrate in pressure reduced plasma. SOLUTION: The inner part of a reactive chamber 1 is made to be a low pressure state with an exhausting means 7, next substrate 3 is heated with the heater 2 for heating the substrate. Oxygen as a material gas and a reactive gas obtained by vaporizing a starting material 18 with a vaporizer 15 is fed into the reactive chamber 1 together with a carrier gas with a material gas feeding means 9. When the electric power is fed between a substrate holder 4 and an electrode 5 under this state, plasma discharge is generated between them. The material gas is decomposed, a Mg gas being the component of the target 6 is sputtered, and the MgO thin film is formed on the surface of the substrate 3.
申请公布号 JPH10183335(A) 申请公布日期 1998.07.14
申请号 JP19960341749 申请日期 1996.12.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 FUJII AKIYUKI;TORII HIDEO;TAKAYAMA RYOICHI
分类号 C23C14/08;C23C14/34;H01J9/02;H01J9/227;H01J11/22;H01J11/34;H01J11/40 主分类号 C23C14/08
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