发明名称 |
MANUFACTURE OF MAGNESIUM OXIDE FILM AND ITS MANUFACTURING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To obtain a NaCl type crystal structure of MgO thin film with a wide forming condition regardless of the coefficient of linear expansion of a backing substrate, the substrate temperature and the heat treatment temperature at the time of forming the film and to easily manufacture a high quality of MgO thin film by using magnesium or magnesium oxide as a target and decomposing the vapor of compound containing magnesium and a reactive gas while sputtering on the substrate in pressure reduced plasma. SOLUTION: The inner part of a reactive chamber 1 is made to be a low pressure state with an exhausting means 7, next substrate 3 is heated with the heater 2 for heating the substrate. Oxygen as a material gas and a reactive gas obtained by vaporizing a starting material 18 with a vaporizer 15 is fed into the reactive chamber 1 together with a carrier gas with a material gas feeding means 9. When the electric power is fed between a substrate holder 4 and an electrode 5 under this state, plasma discharge is generated between them. The material gas is decomposed, a Mg gas being the component of the target 6 is sputtered, and the MgO thin film is formed on the surface of the substrate 3. |
申请公布号 |
JPH10183335(A) |
申请公布日期 |
1998.07.14 |
申请号 |
JP19960341749 |
申请日期 |
1996.12.20 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
FUJII AKIYUKI;TORII HIDEO;TAKAYAMA RYOICHI |
分类号 |
C23C14/08;C23C14/34;H01J9/02;H01J9/227;H01J11/22;H01J11/34;H01J11/40 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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