| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic light emission element sensitive to a magnetic field and having a high memory density and a high-speed transfer by bringing a magnetic resistance effect film into contact with a semiconductor light emission element. SOLUTION: An element converting the change of a magnetic field into a voltage or current electric characteristics is combined with a semiconductor light emission element 23 converting the change of the electric characteristics into light. A magnetic resistance effect film 21 is constituted of an oxide such as a LaMnCaO single crystal film or a film dispersed with fine grains of a nonmagnetic metal Cu in a ferromagnetic metal NiFe, for example. The magnetic resistance effect film 21 is formed on the electrode 22 of the semiconductor light emission element 23. The electrode 22 is made of a conductive metal such as Cu, Ta. When a magnetic field is applied from the outside, the electric resistance of the magnetic resistance effect film 21 is changed. The resistance is low when no magnetic field is applied, and the resistance is increased when the magnetic field is applied. The voltage of a circuit is set so that the current flowing in the circuit becomes small when the resistance of the magnetic resistance effect film 21 is large and the flowing current exceeds the luminescent condition of the light emission element 23 when the resistance is small. |
