发明名称 |
Methods for fabricating electrode structures including oxygen and nitrogen plasma treatments |
摘要 |
A method for fabricating an integrated circuit capacitor includes the steps of forming a first electrode on a microelectronic substrate, and plasma treating the first electrode with a with a plasma of a gas including nitrogen and oxygen. A dielectric film is formed on the plasma treated first electrode opposite the microelectronic substrate. A second electrode is formed on the dielectric film opposite the plasma treated first electrode.
|
申请公布号 |
US5780115(A) |
申请公布日期 |
1998.07.14 |
申请号 |
US19970806145 |
申请日期 |
1997.02.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, IN-SUNG;LEE, BYOUNG-TAEK |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H05H1/00;B05D3/06 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|