| 摘要 |
A process for creating a buried contact structure, for a MOSFET device, to be used in an SRAM cell, has been developed. The process features using a thick tungsten silicide layer, on the sides of a split polysilicon shape, followed by a series of selective, anisotropic RIE procedures, used to create a buried contact structure without crevicing or trenching of the semiconductor substrate, in an region adjacent to the buried contact structure.
|
