Gate array driven by source voltages and electronic equipment using the same

摘要

A gate array driven by a plurality of source voltages and an electronic equipment using such a gate array are provided. The gate array comprises a plurality of P-well regions and a plurality of N-well regions, all of which are formed in an internal cell region in a first direction and alternately arranged in a second direction perpendicular to the first direction on a semiconductor substrate. A plurality of first basic cells receive a first source voltage VDD1 through a first source wiring layer, these first basic cells being respectively formed on a pair of P-well and N-well regions. A plurality of second basic cells receive a second source voltage VDD2 through a second source wiring layer, these second basic cells being respectively formed on a pair of P-well and N-well regions. A voltage level shifter for shifting the voltage level between data voltages outputted from first and second basic cell trains is formed on an region containing at least three of the P-well and N-well regions. The voltage level shifter is connected to a wiring layer which connects between the first and second basic cell trains.